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Micron DDR4 SDRAM has new features centered on power savings, performance enhancement, manufacturability, and reliability improvements. These features improve performance, power, manufacturability, reliability and stacking capabilities for the enterprise, cloud, ultrathin, tablet, automotive and embedded markets. DDR4 has data rates up to 3200MT/s, an operating voltage of 1.2V and additional power saving features. Increases performance up to 50% and deliver total energy savings up to 25% compared to DDR3.
Parameter | 8GB |
Row address | 128K A[16:0] |
Column address | 1K A[9:0] |
Device bank group address | 2 BGO |
Device bank address per group | 4 BA[1:0] |
Device configuration | 16Gb (1 Gig x 16), 8 banks |
Module rank address | CS0_n |
Part Number | Module Density | Configuration | Module Bandwith | Memory Clock/Data Rate | Clock Cycles |
MTA4ATF1G64HZ-3G2E2 | 8GB | 1 Gig x 64 | 25.6 GB/s | 0.625ns/3200 MT/s | 22-22-22 |